器件名称: BUZ101S
功能描述: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
文件大小: 69.79KB 共8页
简 介:Preliminary data
BUZ 101 S
SPP22N05
SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature
Pin 1 G Type BUZ 101 S
Pin 2 D
Pin 3 S
VDS
55 V
ID
22 A
RDS(on)
0.06
Package TO-220 AB
Ordering Code Q67040-S4013-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 22 16 Unit A
ID
TC = 25 °C TC = 100 °C
Pulsed drain current
IDpuls
88
TC = 25 °C
Avalanche energy, single pulse
EAS
90
mJ
ID = 22 A, VDD = 25 V, RGS = 25 L = 372 H, Tj = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IAR EAR
dv/dt
22 5.5
A mJ kV/s
IS = 22 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 °C
Gate source voltage Power dissipation 6
VGS Ptot
± 20 55
V W
TC = 25 °C
Semiconductor Group
1
04/Nov/1997
Preliminary data
BUZ 101 S
SPP22N05
Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 2.7 ≤ 62 55 / 175 / 56 K/W Unit °C
Tj Tstg RthJC RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
55 3 0.1 10 0.04 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 40 A
Zero gate voltage drain current
IDSS
0.1 1 100
A
VDS = 5……
