器件名称: BF1009
功能描述: Silicon N-Channel MOSFET Tetrode
文件大小: 36.16KB 共4页
简 介:BF 1009
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 1009
Marking Ordering Code Pin Configuration JKs Q62702-F1613 1 = S 2=D
Package
3 = G2 4 = G1 SOT-143
Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation , T S ≤ 76 °C0 Storage temperature Channel temperature Symbol Value 12 25 10 3 200 -55 ...+150 150 V mW °C Unit V mA
VDS ID
±IG1/2SM +VG1SE
Ptot Tstg Tch
Thermal Resistance Channel - soldering point
Rthchs
≤370
K/W
Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group Semiconductor Group
11
Sep-09-1998 1998-11-01
BF 1009
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 -
Unit
V(BR)DS
±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS
16 8 9 8 -
V
I D = 300 A, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage
±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current
A nA A mA V
VG1S = 6 V, V G2S = 0 V
Gate 2 source leakage current ±VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current
I DSS I DSO VG2S(……