器件名称: W49L201S-70
功能描述: 256K X 8 CMOS FLASH MEMORY
文件大小: 190.41KB 共23页
简 介:Preliminary W49L201 128K × 16 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 3.3-volt operations: 3.3-volt Read/Erase/Program Fast Program operation: Word-by-Word programming: 50 S (max.) Fast Erase operation: 100 mS (typ.) Fast Read access time: 70/90 nS Endurance: 10K cycles (typ.) Ten-year data retention Hardware data protection Sector configuration One 8K words Boot Block with lockout protection Two 8K words Parameter Blocks One 104K words (208K bytes) Main Memory Array Blocks
Low power consumption Active current: 15 mA (typ.) Standby current: 10 A (typ.)
Automatic program and erase timing with internal VPP generation End of program or erase detection Toggle bit Data polling
Latched address and data TTL compatible I/O JEDEC standard word-wide pinouts Available packages: 44-pin SOP, 48-pin TSOP
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Publication Release Date: May 2000 Revision A1
Preliminary W49L201
PIN CONFIGURATIONS BLOCK DIAGRAM
VDD VSS
NC NC NC A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE DQ0 DQ8 DQ1 DQ9 DQ2……
