器件名称: W49F020Q-90B
功能描述: 256K X 8 CMOS FLASH MEMORY
文件大小: 190.61KB 共21页
简 介:Preliminary W49F020 256K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations: 5-volt Read 5-volt Erase 5-volt Program
Low power consumption Active current: 25 mA (typ.) Standby current: 20 A (typ.)
Fast Program operation: Byte-by-Byte programming: 50 S (max.) Fast Erase operation: 100 mS (typ.) Fast Read access time: 70/90 nS Endurance: 1K/10K cycles (typ.) Twenty-year data retention Hardware data protection One 8K byte Boot Block with Lockout protection
Automatic program and erase timing with internal VPP generation End of program or erase detection Toggle bit Data polling
Latched address and data TTL compatible I/O JEDEC standard byte-wide pinouts Available packages: 32-pin DIP and 32-pin TSOP and 32-pin-PLCC
-1-
Publication Release Date: October 1999 Revision A1
Preliminary W49F020
PIN CONFIGURATIONS
NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 VDD WE A17 A14 A13 A8 A9 A11 OE A10 CE DQ7 DQ6 ……
