EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > WINBOND > W49F002UP12B

W49F002UP12B

器件名称: W49F002UP12B
功能描述: 256K X 8 CMOS FLASH MEMORY
文件大小: 303.88KB    共23页
生产厂商: WINBOND
下  载:    在线浏览   点击下载
简  介:W49F002U 256K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES Single 5-volt operations: 5-volt Read 5-volt Erase 5-volt Program Fast Program operation: Byte-by-Byte programming: 35 S (typ.) Fast Erase operation: 100 mS (typ.) Fast Read access time: 70/90/120 nS Endurance: 10K cycles (typ.) Ten-year data retention Hardware data protection One 16K byte Boot Block with Lockout protection Two 8K byte Parameter Blocks Two Main Memory Blocks (96K, 128K) Bytes Low power consumption Active current: 25 mA (typ.) Standby current: 20 A (typ.) Automatic program and erase timing with internal VPP generation End of program or erase detection Toggle bit Data polling Latched address and data TTL compatible I/O JEDEC standard byte-wide pinouts Available packages: 32-pin DIP and 32-pin TSOP and 32-pin-PLCC -1- Publication Release Date: April 2000 Revision A2 W49F002U PIN CONFIGURATIONS BLOCK DIAGRAM RESET A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ……
相关电子器件
器件名 功能描述 生产厂商
W49F002UP12B 256K X 8 CMOS FLASH MEMORY WINBOND
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2