器件名称: W39L040Q-90
功能描述: 512 K X 8 CMOS FLASH MEMORY
文件大小: 334.4KB 共27页
简 介:W39L040 512K × 8 CMOS FLASH MEMORY
1. GENERAL DESCRIPTION
The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide (× 8) data appears on DQ7 DQ0. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39L040 results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.
2. FEATURES
Single 3.3-volt operations 3.3-volt Read 3.3-volt Erase 3.3-volt Program
Hardware protection:
Optional 16K byte or 64K byte Top/Bottom Boot Block with lockout protection
Fast Program operation: Byte-by-Byte programming: 50 S (max.) Fast Erase operation: Chip Erase cycle time: 100 mS (max.) Sector Erase cycle time: 25 mS (max.) Page Erase cycle time: 25 mS (max.)
Flexible 4K-page size can be used as Parameter Blocks
Typical program/erase cycles: 1K/10K Twenty-year data retention Low power consumption
Active current: 10 mA (typ.) Standby current: 2 A (typ.)
End of program detection
Read access time: 70/90 nS
Software method: Toggle bit/Data polling
TTL compatible I/O JEDEC standard byte-wide pinouts Available pa……
