器件名称: W39L020P-90B
功能描述: 128K X 8 CMOS FLASH MEMORY
文件大小: 242.15KB 共19页
简 介:W29EE012 128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations Fast page-write operations 128 bytes per page Page program cycle: 10 mS (max.) Effective byte-program cycle time: 39 S Optional software-protected data write
Low power consumption Active current: 25 mA (typ.) Standby current: 20 A (typ.)
Automatic program timing with internal VPP generation End of program detection Toggle bit Data polling
Fast chip-erase operation: 50 mS Page program/erase cycles: 1,000 Ten-year data retention Software and hardware data protection
Latched address and data TTL compatible I/O JEDEC standard byte-wide pinouts
-1-
Publication Release Date: March 26, 2002 Revision A3
W29EE012
PIN CONFIGURATIONS BLOCK DIAGRAM
NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27
VDD #WE NC A14 A13 A8 A9 A11 #OE A10 #CE DQ7 DQ6 DQ5 DQ4 DQ3
VDD VSS #CE #OE #WE
CONTROL OUTPUT BUFFER
DQ0
. .
DQ7
32-pin DIP
2……
