器件名称: W29EE512P-70B
功能描述: 64K X 8 CMOS FLASH MEMORY
文件大小: 153.67KB 共22页
简 介:W29EE512 64K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations Fast page-write operations Low power consumption
Active current: 50 mA (max.) Standby current: 100 A (max.)
Automatic program timing with internal VPP
128 bytes per page Page program cycle: 10 mS (max.) Effective byte-program cycle time: 39 S Optional software-protected data write
Fast chip-erase operation: 50 mS Read access time: 70/90/120 nS Typical page program/erase cycles: 1K/10K Ten-year data retention Software and hardware data protection
generation
End of program detection
Toggle bit Data polling
Latched address and data TTL compatible I/O JEDEC standard byte-wide pinouts Available packages: 32-pin PLCC, TSOP and
VSOP
-1-
Publication Release Date: February 18, 2002 Revision A7
W29EE512
PIN CONFIGURATIONS BLOCK DIAGRAM
A 1 2 4 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 12 13
A 1 5 3
V N N C C C C 2 1
# W N E C
VDD VSS #CE #OE #WE DQ0
CONTROL OUTPUT BUFFER
. .
32 31 30 29……
