器件名称: W29EE01115B
功能描述: 128K X 8 CMOS FLASH MEMORY
文件大小: 183.23KB 共20页
简 介:W29EE011 128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations Fast page-write operations 128 bytes per page Page program cycle: 10 mS (max.) Effective byte-program cycle time: 39 S Optional software-protected data write
Low power consumption Active current: 25 mA (typ.) Standby current: 20 A (typ.)
Automatic program timing with internal VPP generation End of program detection Toggle bit Data polling
Fast chip-erase operation: 50 mS Read access time: 90/150 nS Page program/erase cycles: 1K/10K Ten-year data retention Software and hardware data protection
Latched address and data TTL compatible I/O JEDEC standard byte-wide pinouts Available packages: 32-pin 600 mil DIP, TSOP, and PLCC
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Publication Release Date: July 1999 Revision A12
W29EE011
PIN CONFIGURATIONS BLOCK DIAGRAM
NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27
VDD WE NC A14 A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 ……
