器件名称: W29C040T-12B
功能描述: 512K X 8 CMOS FLASH MEMORY
文件大小: 261.39KB 共20页
简 介:W29C040 512K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K × 8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/ program) operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be written (erased and programmed) by using standard EPROM programmers.
FEATURES
Single 5-volt write (erase and program) operations Fast page-write operations 256 bytes per page Page write (erase/program) cycle: 5 mS (typ.) Effective byte-write (erase/program) cycle time: 19.5 S Optional software-protected data write
Software and hardware data protection Low power consumption Active current: 25 mA (typ.) Standby current: 20 A (typ.)
Automatic write (erase/program) timing with internal VPP generation End of write (erase/program) detection Toggle bit Data polling
Fast chip-erase operation: 50 mS Two 16 KB boot blocks with lockout Typical page write (erase/program) cycles: 1K/10K (typ.) Read access time: 90/120 nS Ten-year data retention
Latched address and data All inputs and outputs directly TTL compatible JEDEC standard byte-wide pinouts Available packages: TSOP and PLCC
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Publication Release Date: May 1999 Revision A5
W29C040
PIN CONFIGURATIONS BLOCK DIAGRAM
VCC VS……
