器件名称: W27E512Q-12
功能描述: 64K X 8 ELECTRICALLY ERASABLE EPROM
文件大小: 191.07KB 共16页
简 介:W27E512 64K × 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27E512 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65536 × 8 bits that operates on a single 5 volt power supply. The W27E512 provides an electrical chip erase function.
FEATURES
High speed access time:
45/55/70/90/120/150 nS (max.) Read operating current: 30 mA (max.) Erase/Programming operating current 30 mA (max.) Standby current: 1 mA (max.) Single 5V power supply
+14V erase/+12V programming voltage Fully static operation All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs Available packages: 28-pin 600 mil DIP, 330 mil
SOP, TSOP and 32-pin PLCC
PIN CONFIGURATIONS
A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28-pin DIP 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 OE/Vpp A10 CE Q7 Q6 Q5 Q4 Q3
BLOCK DIAGRAM
OUTPUT BUFFER Q0 . . Q7
CE OE/VPP
CONTROL
A0 . DECODER . A15
CORE ARRAY
A A V A A A 1 1 N C 1 1 7 2 5 C C 4 3 4 3 2 1 3 2 5 6 7 8 32-pin 9 PLCC 10 11 12 1 1 1 1 1 13 4 5 6 7 8 3 3 1 0 29 28 27 26 25 24 23 22 1 2 9 0 21
VCC GND
A8 A9 A11 NC OE/Vpp A10 CE Q7 Q6
A6 A5 A4 A3 A2 A1 A0 NC Q0
PIN DESCRIPTION
SYMBOL A0A15 Q0Q7 DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Output Enable, Program/Erase Supply Voltage Power Supply Ground No Connection
Q Q G N Q Q Q 1 2 N C 3 4 5 D OE/Vpp A11 A9 A8 A13 A14 VCC A15 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11……
