器件名称: BC212
功能描述: Amplifier Transistors(PNP Silicon)
文件大小: 107.44KB 共4页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by BC212/D
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
BC212,B BC213 BC214
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 212 –50 –60 BC 213 –30 –45 –5.0 –100 350 2.8 1.0 8.0 – 55 to +150 BC 214 –30 –45 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
1 2 3
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mA, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector–Emitter Leakage Current (VCB = –30 V) Emitter–Base Leakage Current (VEB = –4.0 V, IC = 0) BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 Symbol V(BR)CEO Min –50 –30 –30 –60 –45 –45 –5 –5 –5 — — — — — — Typ — — — — — — — — — — — — — — — Max — — — — — — — — — –15 –15 –15 –15 –15 –15 Unit Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
ICBO
nAdc
IEBO
nAdc
Motorola Small–Signal T……
