器件名称: AM42-0007-DIE
功能描述: GaAs MMIC VSAT Power Amplifier 2W 14.0 - 14.5GHz
文件大小: 507.97KB 共2页
简 介:GaAs MMIC Power Amplifier, 2 W, 14.0 - 14.5 GHz
Features
High Linear Gain: 22 dB Typical. High Saturated Output Power: +33 dBm Typical High Power Added Efficiency: 22% Typical High P1dB: +32 dBm Typical 50 Input / Output Broadband Matched Integrated Output Power Detector High Performance Ceramic Bolt Down Package
AM42-0007-DIE V4
Functional Schematic
Description
M/A-COM’s AM42-0007-DIE is a three stage MMIC linear power amplifier fabricated on a mature 0.5 micron MBE based GaAs process. The AM42-0007DIE employs a fully matched chip with integral bias networks and output power detector. This GaAs MMIC power amplifier is ideally suited for used as an output stage or driver in applications for VSAT applications.
Ordering Information
Part Number AM42-0007-DIE Package DIE
Typical Bias Configuration 3,4
Absolute Maximum Ratings 1,2
Parameter
VDD VGG Power Dissipation RF Input Power ChannelTemperature Storage Temperature Absolute Maximum +12 Volts -10 Volts 17.9 W +23 dBm +150 °C -65 °C to +150 °C
1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. Back of die temperature (TB) = +25°C.
3. Nominal bias is obtained by first connecting –5 volts to pin VGG (resistor network used) followed by connecting +9 volts to pin VDD. Note sequence. 4. It is recommended that the die be mounted with Au/Sn eutectic performs for good RF ground and thermal interface.
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