器件名称: BAT54SWT1G
功能描述: Schottky Diodes
文件大小: 88.71KB 共3页
简 介:BAT54SWT1G/BAT54CWT1G Schottky Diodes
April 2005
BAT54SWT1G/BAT54CWT1G
Schottky Diodes
Connection Diagram
3
BAT54SWT1G BAT54CWT1G
3
3
1
2
MARKING
1
2
1
2
SOT-323
BAT54SWT1G = YB BAT54CWT1G = YC
Absolute Maximum Ratings *
Symbol
VRRM IF(AV) IFSM TSTG TJ
Ta = 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Storage Temperature Range Operating Junction Temperature
Value
30 200 600 -65 to +125 -65 to +125
Unit
V mA mA °C °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RθJA Power Dissipation Thermal Resistance, Junction to Ambient
Parameter
Value
232 430
Unit
mW °C/W
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics
Symbol
VR VF
TC = 25°C unless otherwise noted
Parameter
Breakdown Voltage Forward Voltage IR = 10A IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 25V
Conditions
Min.
30
Max.
240 320 400 500 0.8 2 10 5.0
Units
V mV mV mV mV V A pF ns
IR CT trr
Reverse Leakage Total Capacitance Reverse Recovery Time
VR = 1V, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA, RL = 100
2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BAT54SWT1G/BAT54CWT1G Rev. A
BAT54SWT1G/BAT54CWT1G Schottky Diodes
Typical Performance Characteristics
Figure 1. Forward Voltage vs Temperature
1E-3
……
