器件名称: BAS16HT1G
功能描述: Switching Diode
文件大小: 45.31KB 共4页
简 介:BAS16HT1
Preferred Device
Switching Diode
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc 1 CATHODE 2 ANODE
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Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1. FR-4 Minimum Pad. Symbol PD Max 200 1.57 RθJA TJ, Tstg 635 55 to 150 Unit mW mW/°C °C/W °C
1 SOD323 CASE 477 STYLE 1
MARKING DIAGRAM
A6 M Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 Adc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 ) Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 ) IR V(BR) VF CD VFR trr QS 715 855 1000 1250 2……
