器件名称: BAP64-02
功能描述: Silicon PIN diode
文件大小: 165.35KB 共2页
简 介:Silicon PIN diode
FEATURES High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Very low series inductance For applications up to 3 GHz. APPLICATIONS RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD523 ultra small plastic SMD package.
BAP64 – 02
1
2
SOD523 SC-79
1 CATHODE
2 ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN. – – – -65 -65 MAX. 175 100 715 +150 +150 UNIT V mA mW °C °C
I
T s =90°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS I F =50 mA V R =175V V R =20V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 20 V; f = 1 MHz r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 I F = 100 mA; f = 100 MHz; note 1 τL charge carrier life time when switched from I F =10 mA to I R = 6 mA; R L = 100 ; measured at I R =3 mA L Note
S
TYP. 0.95 – – 0.48 0.35 0.23 20 10 2 0.7 1.55
MAX. 1.1 10 1 – – 0.35 40 20 3.8 1.35 –
UNIT V A A pF pF pF s
series inductance
0.6
–
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER therma……