器件名称: BAP51-02
功能描述: General purpose PIN diode
文件大小: 165.63KB 共2页
简 介:General purpose PIN diode
BAP51 – 02
FEATURES Low diode capacitance Low diode forward resistance. APPLICATIONS General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package.
2 1
SOD523 SC-79 1 CATHODE 2 ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR I IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN. – – – -65 -65 MAX. 60 50 715 +150 +150 UNIT V mA mW °C °C
T s =90°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF VR IR Cd PARAMETER forward voltage reverse voltage reverse current diode capacitance CONDITIONS I F =50 mA I R =10mA V R =50 V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 5 V; f = 1 MHz r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W MIN – 50 – – – – – – – TYP. 0.95 – – 0.4 0.3 0.2 5.5 3.6 1.5 MAX. 1.1 – 100 – 0.55 0.35 9 6.5 2.5 UNIT V V nA pF pF pF
S24–1/2
BAP51-02
10 f = 100 MHz; T j =25°C
500
400 5 300
C d (pF)
2
r D( )
200
100
1 10 -1
1
10
0 0
f = 1 MHz; T j =25°C 4 8 12 16 20
I F (mA )
VR(V)
Fig.1 Forward resistance as a function of forward curre……
