器件名称: AP01N60H
功能描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件大小: 61.72KB 共4页
简 介:AP01N60H/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 8Ω 1.6A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications.
G DS
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 ±30 1.6 1 6 39 0.31
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
13 1.6 0.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 110 Units ℃/W ℃/W
200705052-1/4
Data & specifications subject to change without notice
AP01N60H/J
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min. 600 2 -
Typ. 0.6 7.2 0.8 7.7 1.5 2.6 8 ……
