器件名称: STE180N10
功能描述: N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET
文件大小: 85.1KB 共8页
简 介:
STE180N10
N - CHANNEL 100V - 5.5 m - 180A - ISOTOP POWER MOSFET
TYPE STE180N10
s s s s s
V DSS 100 V
R DS(on) < 7 m
ID 180 A
TYPICAL RDS(on) = 5.5 m 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
INDUSTRIAL APPLICATIONS: s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID ID I DM ( ) P tot V ISO T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (AC-RMS) Storage T emperature Max. Operating Junction Temperature
o o o
Value 100 100 ± 20 180 119 540 450 3.6 2500 -55 to 150 150
( 1) ISD ≤180 Α, di/dτ ≤ 200 A/s, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V
o o
C C 1/8
() Pulse width limited by safe operating area
February 1999
STE180N10
THERMAL DATA
R thj -case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With conductive Grease Applied Max Max 0.27 0.05
o o
C/W C/W
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25 V) Max Value 60 720 Unit A mJ
ELECTRICAL CHARACTE……
