器件名称: 313E
功能描述: GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
文件大小: 271.45KB 共6页
简 介:HMC313 / 313E
v04.0307
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
Features
P1dB Output Power: +14 dBm Output IP3: +27 dBm Gain: 17 dB Single Supply: +5V High Reliability GaAs HBT Process Ultra Small Package: SOT26 Included in the HMC-DK001 Designer’s Kit
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Typical Applications
Ideal as a Driver & Amplifier for: 2.2 - 2.7 GHz MMDS 3.5 GHz Wireless Local Loop 5.0 - 6.0 GHz UNII & HiperLAN
Functional Diagram
General Description
The HMC313 & HMC313E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifiers that operate from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313 & HMC313E offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current.
Electrical Specifications, TA = +25 °C, Vcc = +5.0V
Vcc = +5V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1.0 GHz Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (IP3) @ 1.0 GHz Noise Figure Supply Current (Icc) Note: Data taken with broadband bias tee on device output. 24 11 14 Typ. DC - 6 17 0.02 7 6 30 14 15 27 6.5 50 20 0.03 Max. GHz dB dB/°C dB dB dB dBm dBm dBm dB mA Units
5 - 28
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