器件名称: 74AHC2G00DP
功能描述: The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device
文件大小: 94.11KB 共17页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74AHC2G00; 74AHCT2G00 2-input NAND gate
Product specication 2004 Jan 21
Philips Semiconductors
Product specication
2-input NAND gate
FEATURES Symmetrical output impedance High noise immunity ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 500 V. Low power dissipation Balanced propagation delays SOT505-2 and SOT765-1 package Specified from 40 to +85 °C and 40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
74AHC2G00; 74AHCT2G00
DESCRIPTION The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function.
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. PARAMETER propagation delay nA and nB to nY input capacitance power dissipation capacitance per gate CL = 50 pF; f = 1 MHz; notes 1 and 2 CONDITIONS AHC2G CL = 15 pF; VCC = 5 V 3.5 1.5 17 AHCT2G 3.6 1.5 18 ns pF pF UNIT
2004 Jan 21
2
Philips Semiconductors
Product specication
2-input NAND gate
FUNCTION TABLE See note 1. INPUT nA L L H H Note 1. H = HIGH voltage level; L = LOW voltage ……
