器件名称: 74AHC1G66GV
功能描述: Bilateral switch
文件大小: 108KB 共24页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74AHC1G66; 74AHCT1G66 Bilateral switch
Product specication Supersedes data of 2002 Feb 15 2002 Jun 06
Philips Semiconductors
Product specication
Bilateral switch
FEATURES Very low ON-resistance: – 26 (typical) at VCC = 3.0 V – 16 (typical) at VCC = 4.5 V – 14 (typical) at VCC = 5.5 V. ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. High noise immunity Low power dissipation Balanced propagation delays SOT353 and SOT753 package Output capability: non standard Specified from 40 to +125 °C. QUICK REFERENCE DATA Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 3 ns.
74AHC1G66; 74AHCT1G66
DESCRIPTION The 74AHC1G/AHCT1G66 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G66 provides an analog switch. The switch has two input/output pins (Y and Z) and an active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned off.
TYPICAL SYMBOL tPZH/tPZL tPHZ/tPLZ CI CPD CS Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi + ((CL + CS) × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = maximum switch capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. PARAMETER turn-on time E to Vos turn-off time E to Vos input capacitance power dissipation capacitance switch capacitance CL = 50 pF; f = 10 MHz; notes 1 a……
