器件名称: 74AHC1G14GV
功能描述: Inverting Schmitt trigger
文件大小: 105.53KB 共20页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74AHC1G14; 74AHCT1G14 Inverting Schmitt trigger
Product specication Supersedes data of 2002 Feb 18 2002 Jun 06
Philips Semiconductors
Product specication
Inverting Schmitt trigger
FEATURES Symmetrical output impedance High noise immunity ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. Low power dissipation Balanced propagation delays Very small 5 pin package Output capability: standard Specified from 40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
74AHC1G14; 74AHCT1G14
APPLICATIONS Wave and pulse shapers Astable multivibrators Monostable multivibrators. DESCRIPTION The 74AHC1G/AHCT1G14 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G14 provides the inverting buffer function with Schmitt-trigger action. These devices are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. FUNCTION TABLE See note 1. INPUT A L H Note 1. H = HIGH voltage level; L = LOW voltage level. OUTPUT Y H L PARAMETER propagation delay A to Y input capacitance power dissipation c……