器件名称: 74AHC1G07
功能描述: Buffer with open-drain output
文件大小: 77.25KB 共16页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74AHC1G07; 74AHCT1G07 Buffer with open-drain output
Product specication Supersedes data of 2002 Jun 06 2002 Oct 02
Philips Semiconductors
Product specication
Buffer with open-drain output
FEATURES High noise immunity ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. Low power dissipation SOT353 and SOT753 packages Output capability standard (open-drain) Specified from 40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
74AHC1G07; 74AHCT1G07
DESCRIPTION The 74AHC1G/AHCT1G07 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G07 provides the non-inverting buffer. The output of the 74AHC1G/AHCT1G07 devices is open-drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.
TYPICAL SYMBOL tPZL tPLZ CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. FUNCTION TABLE See note 1. INPUT A L H Note 1. H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state. OUTPUT Y L Z PARAMETER propagation delay A to Y propagation delay……
