器件名称: 74AHC1G04GW
功能描述: Inverter
文件大小: 76.23KB 共16页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74AHC1G04; 74AHCT1G04 Inverter
Product specication Supersedes data of 2002 May 27 2003 Sep 04
Philips Semiconductors
Product specication
Inverter
FEATURES Symmetrical output impedance High noise immunity ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. Low power dissipation Balanced propagation delays Very small 5-pin package Specified from 40 to +85 °C and 40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
74AHC1G04; 74AHCT1G04
DESCRIPTION The 74AHC1G04/74AHCT1G04 are high-speed Si-gate CMOS devices. The 74AHC1G04/74AHCT1G04 provides the inverting buffer.
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑(CL × VCC2 × fo) = sum of outputs. 2. The condition is VI = GND to VCC. PARAMETER CONDITIONS 74AHC1G04 propagation delay input A to output Y CL = 15 pF; VCC = 5 V input capacitance power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 3.1 1.5 15 74AHCT1G04 3.4 1.5 16 ns pF pF UNIT
2003 Sep 04
2
Philips Semiconductors
Product specication
Inverter
FUNCTION TABLE See note 1. INPUT A L H Note 1. H = HIGH voltage level; L = LOW voltage level. O……
