器件名称: 6N80
功能描述: N-Channel Enhancement Mode
文件大小: 87.34KB 共4页
简 介:Standard Power MOSFET
N-Channel Enhancement Mode
VDSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V
ID25 6A 6A
RDS(on) 1.8 1.4
Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGS = 1 M Continuous Transient TC = 25 °C TC = 25° C, pulse width limited by TJM TC = 25 °C
Maximum Ratings 800 800 ±20 ±30 6 24 180 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G G = Gate, S = Source, D = Drain, TAB = Drain
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Features
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 800 2 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 1.8 1.4 V V nA A mA
Applications
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VDSS VGS(th) I GSS I DSS RDS(on)
VGS = 0 V, ID = 3 mA V DS = VGS, ID = 250 A VGS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25
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Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Advantages
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6N80 6N80A Pulse test, t ≤ 300 s, duty cycle d ≤ 2 %
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Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings……
