器件名称: 62LV256
功能描述: 32K x 8 LOW VOLTAGE STATIC RAM
文件大小: 40.95KB 共9页
简 介:IS62LV256
32K x 8 LOW VOLTAGE STATIC RAM
ISSI
DESCRIPTION
DECEMBER 2002 FEATURES
Access time: 45, 70 ns Low active power: 70 mW Low standby power — 45 W CMOS standby Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 3.3V power supply
The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS double-metal technology. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 10 W (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62LV256 is pin compatible with other 32K x 8 SRAMs in 300-mil SOJ, 330-mil plastic SOP, and TSOP (Type I Normal and Reverse Bent) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
256 X 1024 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE OE WE CONTROL CIRCUIT
Copyright 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any pu……
