器件名称: 62LV1024SC
功能描述: Very Low Power/Voltage CMOS SRAM 128K X 8 bit
文件大小: 383.06KB 共11页
简 介:BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 128K X 8 bit
DESCRIPTION
BS62LV1024
Wide Vcc operation voltage : 2.4V ~ 5.5V Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE2, CE1, and OE options
The BS62LV1024 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.02uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV1024 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV1024 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.
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