器件名称: 61LV5128
功能描述: 512K x 8 HIGH-SPEED CMOS STATIC RAM
文件大小: 73.15KB 共9页
简 介:IS61LV5128
512K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
High-speed access times: 10, 12 and 15 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 3.3V power supply Packages available: – 36-pin 400-mil SOJ – 36-pin miniBGA – 44-pin TSOP (Type II)
ISSI
JULY 2001
DESCRIPTION The ISSI IS61LV5128 is a very high-speed, low power,
524,288-word by 8-bit CMOS static RAM. The IS61LV5128 is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 W (typical) with CMOS input levels. The IS61LV5128 operates from a single 3.3V power supply and all inputs are TTL-compatible. The IS61LV5128 is available in 36-pin 400-mil SOJ, 36pin mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K X 8 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE OE WE CONTROL CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which ma……
