器件名称: 619
功能描述: SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR
文件大小: 1652.81KB 共3页
简 介:SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR
ISSUE 6 - JANUARY 2003 FEATURES
FCX619
C
*
* * * * *
2W POWER DISSIPATION
6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE; RCE(sat) 87m at 2.75A FCX720 619
E C B
COMPLIMENTARY TYPE PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j :T stg VALUE 50 50 5 6 3.0 500 1.5 2 -55 to +150 UNIT V V V A A mA W °C
recommended Ptot calculated using FR4 measuring 25x25x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX619
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO MIN. 50 50 5 TYP. 190 65 8.3 100 100 100 13 150 190 240 0.97 0.89 20……
