器件名称: 616LP3E
功能描述: GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
文件大小: 351.14KB 共10页
简 介:HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
Features
Low Noise Figure: 0.5 dB High Gain: 24 dB High Output IP3: +37 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3mm QFN Package: 9 mm2
5
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC616LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio DAB Receivers
Functional Diagram
General Description
The HMC616LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 175 and 660 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC616LP3(E) shares the same package and pinout with the HMC617LP3(E) and HMC618LP3(E) LNAs. The HMC616LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.
Electrical Specifi cations, TA = +25° C, Rbias = 3.92k Ohms*
Vdd = +3 Vdc Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)……
