器件名称: STE180NE10
功能描述: N-channel 100V - 4.5m
文件大小: 247.38KB 共12页
简 介:STE180NE10
N-channel 100V - 4.5m - 180A - ISOTOP STripFET Power MOSFET
General features
Type STE180NE10
■ ■ ■ ■
VDSS 100V
RDS(on) <6m
ID 180A
100% avalanche tested Low intrinsic capacitance Gate charge minimized Reduced voltage spread
ISOTOP
Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
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Switching application
Order codes
Part number STE180NE10 Marking E180NE10 Package ISOTOP Packaging Tube
February 2007
Rev 6
1/12
www.st.com 12
Contents
STE180NE10
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STE180NE10
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM (1) PTOT
Absolute maximu……
