器件名称: 09N03
功能描述: 25V N-Channel Enhancement Mode MOSFET
文件大小: 142.69KB 共4页
简 介:PJD09N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
RDS(ON), VGS@10V,IDS@30A=9m RDS(ON), VGS@4.5V,IDS@30A=12m Advanced trench process technology High Density Cell Design For Uitra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above can meet RoHS environment substance directive request
MECHANICALDATA
Case: TO-252 Molded Plastic Terminals : Solderable per MIL-STD-202,Method 208 Marking : 09N03
Drain
Gate Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt
1)
S ym b o l VD S VGS ID ID M TA = 2 5 O C TA = 7 5 O C PD TJ , TS T G EAS RθJ C RθJ A
Li mi t 25 +20 50 240 45 26 -5 5 to + 1 5 0 130 2 .8 50
U ni t s V V A A W
O
M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=23A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2
C
mJ
O
C /W C /W
O
Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-MAY.29.2006
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PJD09N03
ELECTRICALCHARACTERISTIC……
