器件名称: NT5DS4M32EG-5
功能描述: 1M
文件大小: 1044.46KB 共46页
简 介:NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com
NT5DS4M32EG
Advance Information
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
General Overview
The NT5DS4M32EG is 134,217,728 bits of double data rate synchronous dynamic RAM organized as 4 x 1,048,576 bits by 32 I/Os. Synchronous features with Data Strobe allow extremely high performance up to 400Mbps/pin. I/O transactions are possible on both edges of the clock. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Features
VDD = 2.5V±5% , VDDQ = 2.5V±5% SSTL_2 compatible inputs/outputs 4 banks operation MRS cycle with address key programs Data I/O transaction on both edges of Data strobe 4 DQS (1 DQS/Byte) DLL aligns DQ and DQS transaction with Clock transaction Edge aligned data & data strobe output Center aligned data & data strobe input DM for write masking only Auto & self refresh 32ms refresh period (4K cycle) 144-Ball FBGA package Maximum clock frequency up to 200MHz Maximum data rate up to 400Mbps/pin
-CAS latency 2,3 (clock) -Burst length (2, 4, 8 and Full page) -Burst type (sequential & interleave)
Full page burst length for sequential burst type only Start address of the full page burst should be even All inputs except data & DM are sampled at the rising edge ……
