器件名称: 2SK4037
功能描述: 470 MHz Band Amplifier Applications
文件大小: 171.87KB 共5页
简 介:2SK4037
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK4037
470 MHz Band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment Output power: Po = 36.5dBmW (typ) Gain: Gp = 11.5dB (typ) Drain Efficiency: ηD = 60.0% (typ) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS(Note 1) ID PD (Note 2) Tch Tstg Rating 12 3 3 20 150 45~150 Unit V V A W °C °C
JEDEC
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Note:
JEITA ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5N1A temperature, etc.) may cause this product to decrease in the Weight: 0.08 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Operatin……
