器件名称: SZM-3066Z
功能描述: 3.3-3.8GHz 2W Power Amplifier
文件大小: 614.52KB 共9页
简 介:Preliminary
Product Description
Sirenza Microdevices’ SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/ off power control and high RF overdrive robustness. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix.
SZM-3066Z
3.3-3.8GHz 2W Power Amplifier
RoHS Compliant & Green Package
Pb
6mm x 6mm QFN Package
Functional Block Diagram
Vcc = 5V
Product Features
P1dB =33.5dBm @ 5V Three Stages of Gain: 34dB 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V,730mA Active Bias with Adjustable Current On-chip Output Power Detector Low Thermal Resistance Power up/down control < 1s Class 1C ESD Rating
RFIN
RFOUT
Vbias = 5V
Stage 1 Bias
Stage 2 Bias
Stage 3 Bias
Power Up/Dow n Control
Pow er Detector
Applications
802.16 WiMAX Driver or Output Stage Fixed Wireless, WLL
Unit MHz dBm dB dBm dBc dB dB V V mA mA mA C/W 10 ……
