器件名称: 2SK2275
功能描述: SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
文件大小: 96.82KB 共8页
简 介:DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2275
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2275 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2
FEATURES
φ3.2 ± 0.2
Low On-state Resistance RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2.0 A)
3 ± 0.1 1 2 3 4 ± 0.2 12.0 ± 0.2 13.5 MIN. 0.65 ± 0.1
LOW Ciss
Ciss = 1 000 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 900 ± 30 ± 3.5 ± 14 35 2.0 –55 to +150 150 3.5 22 V V A A W W °C °C A mJ
1 2 3 0.7 ± 0.1 2.54 TYP.
15.0 ± 0.3
Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissipation (Ta = 25 °C) PT2 Storage Temperature Channel Temperature Single Avalanche Current Single Avalanche Energy
*PW ≤ 10 s, Duty Cycle ≤ 1% **Starting Tch = 25 °C, RG = 25 , VGS = 20 V → 0
1.3 ± 0.2 1.5 ± 0.2 2.54 TYP.
2.5 ± 0.1
Tstg Tch IAS** EAS**
1. Gate 2. Drain 3. Source
MP-45F (ISOLATED TO-220)
Drain (D)
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Source (S) Body diode Gate (G)
Document No. TC-2510 (O.D. No. TC–8069) Date Publishe……
