器件名称: 2SK2266_06
功能描述: N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
文件大小: 771.37KB 共6页
简 介:2SK2266
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L πMOSV)
2
2SK2266
Chopper Regulator, DC–DC Converter and Motor Drive Applications
z 4-V gate drive z Low drainsource ON resistance z High forward transfer admittance z Enhancement mode : RDS (ON) = 22 m (typ.) : |Yfs| = 27 S (typ.) Unit: mm
z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 45 180 65 246 45 6.5 150 55~150 Unit V V V A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test re……
