器件名称: 2SK2220
功能描述: Silicon N Channel MOS FET
文件大小: 72.02KB 共6页
简 介:2SK2220, 2SK2221
Silicon N Channel MOS FET
REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Source (Flange) 3. Drain
1
2
S 3
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK2220, 2SK2221
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage 2SK2220 2SK2221 Symbol VDSX VGSS ID IDR Pch*1 Tch Tstg Ratings 180 200 ±20 8 8 100 150 –55 to +150 Unit V V A A W °C °C
Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage 2SK2220 2SK2221 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 2. Pulse Test Symbol V(BR)DSX V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff Min 180 200 ±20 0.15 — 0.7 — — — — — Typ — — — — — 1.0 600 800 8 250 90 Max — — — 1.45 12 1.4 — — — — — Unit V V V V S pF pF pF ns ns Test conditions ID = 10 mA, VGS = –10 V IG = ……
