器件名称: 2SK2216
功能描述: Silicon N-Channel MOS FET
文件大小: 47.52KB 共8页
简 介:2SK2216
Silicon N-Channel MOS FET
ADE-208-346A 2nd. Edition
Application
UHF power amplifier
Features
High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz) Compact package Suitable for push - pull circuit
Outline
2SK2216
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch* Tch Tstg
1
Ratings 60 ±10 20 150 150 –55 to +150
Unit V V A W °C °C
Electrical Characteristics (TC = 25°C)
Item Drain leakage current*
1 1 1
Symbol Min I DSS I GSS VGS(off) VDS(on) |yfs| Ciss Coss POUT ηD
1
Typ — — — 1.2 4.0 250 85 140 55
Max 1 ±3 1.6 2.5 — — — — —
Unit mA A V V S pF pF W %
Test conditions VDS = 60 V, VGS = 0 VGS = ± 10 V, VDS = 0 VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A*2 VDS = 10 V, ID = 5 A*2 VGS = 5 V, VDS = 0 f = 1MHz VDS = 10V, VGS = 0 f = 1MHz VDS = 28 V, IDO = 0.4 A f = 860 MHz, Pin = 15 W
— — 0.3 — 3.0 — — 100 —
Gate leakage current*
Gate to source cutoff voltage* Drain to source voltage*
Forward transfer admittance*1 Input capacitance*1 Output capacitance*1 Output power Drain efficiency Notes: 1. Shows / unit FET 2. Pulse Test
2
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Package Dimensions
Unit: mm
7
2SK2216
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