器件名称: 2SK2212
功能描述: Silicon N-Channel MOS FET
文件大小: 48.33KB 共10页
简 介:2SK2212
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK2212
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 200 ±20 10 40 10 30 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2212
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 200 ±20 — — 2.0 — 3.5 — — — — — — — — — Typ — — — — — 0.24 6 1000 360 65 18 80 65 50 1.1 190 Max — — ±10 250 4.0 0.3 — — — — — — — — — — Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF / dt = 100 A / s Test conditions I D = 10 mA, VGS = 0 I G = ±100 A, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 160 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 5 A VGS = 10 V*1 ID = 5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 6
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer a……
