器件名称: 2SK2145
功能描述: N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
文件大小: 588.35KB 共5页
简 介:2SK2145
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK2145
Audio Frequency Low Noise Amplifier Applications
Including two devices in SM5 (super mini type with 5 leads.) High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = 50 V Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 k High input impedance: IGSS = 1 nA (max) at VGS = 30 V Unit: mm
Marking
Pin Assignment (top view)
(Q1, Q2 common)
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
Symbol VGDS IG PD (Note 1) Tj Tstg Rating 50 10 300 125 55~125 Unit V mA mW °C °C
― ― 2-3L1C
Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature
JEITA TOSHIBA
Weight: 0.016 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
2SK2145
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics Gate-leak……
