器件名称: 2SK2116
功能描述: Silicon N-Channel MOS FET
文件大小: 33.94KB 共6页
简 介:2SK2116, 2SK2117
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator
Outline
TO-220CFM
D G
12 3
1. Gate 2. Drain 3. Source
S
2SK2116, 2SK2117
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK2116 2SK2117 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 450 500 ±30 7 28 7 35 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK2116, 2SK2117
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage 2SK2116 2SK2117 V(BR)GSS I GSS I DSS Symbol V(BR)DSS Min 450 500 ±30 — — — — — — ±10 250 V A A I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — — 0.6 0.7 6.5 1050 280 40 15 55 95 40 0.95 320 3.0 0.8 0.9 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF / dt = 100 A / s ID = 4 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 V I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V*1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0
Gate to source breakdown voltage Gate to ……
