器件名称: 2SK2114
功能描述: Silicon N-Channel MOS FET
文件大小: 33.97KB 共6页
简 介:2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator
Outline
TO-220CFM
D G
12 3
1. Gate 2. Drain 3. Source
S
2SK2114, 2SK2115
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 450 500 ±30 5 20 5 35 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK2114, 2SK2115
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage 2SK2114 2SK2115 V(BR)GSS I GSS I DSS Symbol V(BR)DSS Min 450 500 ±30 — — — — — — ±10 250 V A A I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.5 — — — — — — — — — — 1.0 1.2 4.0 640 160 20 10 25 50 30 0.95 300 3.0 1.4 1.5 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, diF / dt = 100 A / s I D = 2.5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 2.5 A VGS = 10 V RL = 12 V I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V*1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0
Gate to source breakdown voltage Ga……
