器件名称: 2SK2085
功能描述: Silicon N-Channel MOS FET
文件大小: 42.64KB 共9页
简 介:2SK2085
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
D G
32
1 1. Source 2. Drain 3. Gate
S
2SK2085
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 100 ±20 1.0 4.0 1.0 0.9 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2085
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.7 — — — — — — — — — Typ — — — — — 0.6 0.75 1.2 130 50 12 7 6.5 55 20 0.85 80 Max — — ±10 100 2.0 0.9 1.35 — — — — — — — — — — Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 1.0 A, VGS = 0 I F = 1.0 A, VGS = 0, diF / dt = 50 A / s Test conditions I D =……
