器件名称: 2SK2059
功能描述: Silicon N-Channel MOS FET
文件大小: 47.81KB 共9页
简 介:2SK2059(L), 2SK2059(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SK2059(L), 2SK2059(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 600 ±30 3 6 3 20 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2059(L), 2SK2059(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 ±30 — — 2.0 — 1.2 — — — — — — — — — Typ — — — — — 3.8 2.0 295 70 12 8 25 65 30 0.9 220 Max — — ±10 100 3.0 5.0 — — — — — — — — — — Unit V V A A V S pF pF pF ns ns ns ns V ns I F =3 A, VGS = 0 I F = 3A, VGS = 0, diF / dt = 100 A / s Test conditions I D = 10 mA, VGS = 0 I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS =500 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 1A VGS = 10 V*1 I D = 1A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 1A VGS = 10 V RL = 30
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance F……
