器件名称: 2SK1952
功能描述: Silicon N Channel MOS FET
文件大小: 183.07KB 共3页
简 介:2SK1952
Silicon N Channel MOS FET
Application
High speed power switching
TO–220FM
Features
Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC – DC converter Avalanche ratings
2
1
2 3
1
1. Gate 2. Drain 3. Source
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings 60 ±20 40 160 40 40 137 35 150 –55 to +150 Unit V V A A A A mJ W °C °C
——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 s, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50
2SK1952
Table 2 Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate t……
