器件名称: 2SK1627
功能描述: Silicon N-Channel MOS FET
文件大小: 34.34KB 共6页
简 介:2SK1626, 2SK1627
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1626, 2SK1627
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1626 2SK1627 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 5 20 5 35 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1626, 2SK1627
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol 2SK1626 V(BR)DSS 2SK1627 V(BR)GSS I GSS Min 450 500 ±30 — — — — — — ±10 250 V A A I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.5 — — — — — — — — — — 1.0 1.2 4.0 640 160 20 10 25 50 30 0.95 300 3.0 1.4 1.5 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, diF/dt = 100 A/s I D = 2.5 A, VGS = 10 V, RL = 12 I D = 2.5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0
Gate to source breakdown voltage……
