器件名称: 2SK1624L
功能描述: Silicon N-Channel MOS FET
文件大小: 30.04KB 共6页
简 介:2SK1624(L), 2SK1624(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
LDPAK 4 4
1 2 1 D G 2 3
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK1624(L), 2SK1624(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 600 ±30 4 16 4 50 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1624(L), 2SK1624(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 ±30 — — 2.0 — 2.2 — — — — — — — — — Typ — — — — — 1.8 3.5 600 140 25 8 30 60 35 0.9 300 Max — — ±10 250 3.0 2.4 — — — — — — — — — — Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 4 A, VGS = 0 I F = 4 A, VGS = 0, diF/dt = 100 A/s I D = 2 A, VGS = 10 V, RL = 15 Test conditions I D = 10 mA, VGS = 0 I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2 A, VGS = 10 V *1 I D = 2 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static Drain……
