器件名称: 2SJ479S
功能描述: Silicon P Channel DV-L MOS FET High Speed Power Switching
文件大小: 38.52KB 共7页
简 介:2SJ479(L), 2SJ479(S)
Silicon P Channel DV–L MOS FET High Speed Power Switching
ADE-208-541 1st. Edition Features
Low on-resistance R DS(on) = 25 m typ. 4V gate drive devices. High speed switching
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SJ479(L), 2SJ479(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings –30 ±20 –30 –120 –30 50 150 –55 to +150
Unit V V A A A W °C °C
2
2SJ479(L), 2SJ479(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –30 ±20 — — –1.0 — — 12 — — — — — — — — — Typ — — — — — 25 40 20 1700 950 260 20 290 170 130 –1.1 70 Max — — –10 ±10 –2.0 35 60 — — — — — — — — — — Unit V V A A V m m S pF pF pF ns ns ns ns V ns I F = –30A, VGS = 0 I F = –30A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = –10mA, VGS = 0 I G = ±100A, VDS = 0 VDS = –30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –15A, VGS = –10V Note3 I D = –15A, VGS = –4V Note3 I D = –15A, VDS = –10V Note3 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, ID = –15A RL = 0.67
Gate to source cuto……
